symbol unit s v ds v v gs v t a =25c t a =70c i dm v ka v t a =25c t a =70c i fm t a =25c t a =70c t j , t stg c symbol unit s r jl r jl maximum junction-to-lead c steady-state pulsed forward current b 97 63 75 r ja 90 maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a steady-state 125 125 maximum junction-to-lead c steady-state 63 -55 to 150 typ maximum junction-to-ambient a steady-state continuous forward current a parameter: thermal characteristics mosfet maximum junction-to-ambient a t 10s parameter -55 to 150 a absolute maximum ratings t a =25c unless otherwise noted p d i d 3 a 2 40 continuous drain current a gate-source voltage schottky drain-source voltage i f 75 thermal characteristics schottky 90 75 73 96 max c/w c/w mosfet -30 12 -4.2 -3.5 -30 1.4 pulsed drain current b junction and storage temperature range 1.4 w schottky reverse voltage 30 1 1 power dissipation AO8701, AO8701l ( green product ) p-channel enhancement mode field effect transistor with schottky diode rev 1: oct 2004 features v ds (v) = -30v i d = -4.2a r ds(on) < 50m ? (v gs = 10v) r ds(on) < 65m ? (v gs = 4.5v) r ds(on) < 120m ? (v gs = 2.5v) schottky v ds (v) = 30v, i f = 3a, v f =0.5v@1a general description the AO8701 uses advanced trench technology to provide excellent r ds(on) and low gate charge. a schottky diode is provided to facilitate the implementation of a bidirectional blocking switch. AO8701l ( green product ) is offered in a lead-free package. tssop-8 g s s d a a a k 1 2 3 4 8 7 6 5 g d s a k alpha & omega semiconductor, ltd.
AO8701, AO8701l symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -0.7 -1 -1.3 v i d(on) -25 a 43 50 t j =125c 75 54 65 m ? 82 120 m ? g fs 711 s v sd -0.75 -1 v i s -2.2 a c iss 954 pf c oss 115 pf c rss 77 pf r g 6.1 ? q g 9.4 nc q gs 2nc q gd 3nc t d(on) 6.3 ns t r 3.2 ns t d(off) 38.2 ns t f 12 ns t rr 20.2 ns q rr 11.2 nc schottky parameters v f 0.45 0.5 v 0.007 0.05 3.2 10 12 20 c t 37 pf this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. ma v r =30v, t j =125c v r =30v, t j =150c junction capacitance v r =15v forward voltage drop i f =1.0a i rm maximum reverse leakage current v r =30v body diode reverse recovery time body diode reverse recovery charge i f =-4a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-2.5v, i d =-1a v gs =-4.5v, v ds =-5v v gs =-10v, i d =-4.2a reverse transfer capacitance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-24v, v gs =0v v ds =0v, v gs =12v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m ? v gs =-4.5v, i d =-4a i s =-1a,v gs =0v v ds =-5v, i d =-5a i f =-4a, di/dt=100a/ s v gs =0v, v ds =-15v, f=1mhz switching parameters total gate charge v gs =-4.5v, v ds =-15v, i d =-4a gate source charge gate drain charge turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =3.6 ? , r gen =6 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. alpha & omega semiconductor, ltd.
AO8701, AO8701l typical electrical and thermal characteristics this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arisin g out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 5 10 15 20 25 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-2v -2.5v -3v -4.5v -10v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 -v gs (volts) figure 2: transfer characteristics -i d (a) 20 40 60 80 100 120 0246810 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-2.5v v gs =-10v v gs =-4.5v 10 30 50 70 90 110 130 150 170 190 0246810 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-2.5v v gs =-4.5v v gs =-10v i d =-2a 25c 125c i d =-2a i d =-5a alpha & omega semiconductor, ltd.
AO8701, AO8701l typical electrical and thermal characteristics this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arisin g out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 1 2 3 4 5 024681012 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 ja .r ja r ja =90c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s alpha & omega semiconductor, ltd.
AO8701,AO8701l typical electrical and thermal characteristics: schottky 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v f (volts) figure 12: schottky forward characteristics i f (amps) 0 50 100 150 200 250 0 5 10 15 20 25 30 v ka (volts) figure 13: schottky capacitance characteristics capacitance (pf) 0.001 0.01 0.1 1 10 100 0 25 50 75 100 125 150 175 temperature (c) figure 15: schottky leakage current vs. junction temperature leakage current (ma) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: schottky normalized maximum transient thermal impedance z ja normalized transient thermal resistance 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 25 50 75 100 125 150 175 temperature (c) v f (volts) figure 14: schottky forward drop vs. junction temperature single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =90c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse f = 1mhz i f =1a 25c i f =3a v r =30v 125c t on t p d alpha & omega semiconductor, ltd.
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